Share Email Print

Proceedings Paper

Understanding EUV-induced plasma and application to particle contamination control in EUV scanners
Author(s): Mark van de Kerkhof; Andrei Yakunin; Vladimir Kvon; Ferdi van de Wetering; Selwyn Cats; Luuk Heijmans; Andrey Nikipelov; Adam Lassise; Vadim Banine
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUVcompatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus primarily on the approach of advanced particle contamination control and on the understanding of EUV-induced plasma to control both release and transport of particles within the scanner. This paper will present our advancements in understanding and control of particle forces related to the EUV-induced plasma, for EUV sources up to 250W and beyond. This will combine models and simulations with off-line experiments as well as in-situ scanner tests. It will be shown that our understanding of the underlying mechanisms of plasma-induced release and transport of <1um particles enables us to manage defectivity levels down to be compatible with HVM requirements for sub-10nm node lithography.

Paper Details

Date Published: 23 March 2020
PDF: 12 pages
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230Y (23 March 2020); doi: 10.1117/12.2551020
Show Author Affiliations
Mark van de Kerkhof, ASML Netherlands B.V. (Netherlands)
Andrei Yakunin, ASML Netherlands B.V. (Netherlands)
Vladimir Kvon, ASML Netherlands B.V. (Netherlands)
Ferdi van de Wetering, ASML Netherlands B.V. (Netherlands)
Selwyn Cats, ASML Netherlands B.V. (Netherlands)
Luuk Heijmans, ASML Netherlands B.V. (Netherlands)
Andrey Nikipelov, ASML Netherlands B.V. (Netherlands)
Adam Lassise, ASML Netherlands B.V. (Netherlands)
Vadim Banine, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?