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Proceedings Paper

Development of high reflective phase shift type absorber for future generation EUV mask blank (Conference Presentation)
Author(s): Yohei Ikebe; Osamu Nozawa; Takahiro Onoue

Paper Abstract

Toward logic 3nm node and beyond, alternative absorber material is required to reduce mask 3D effect. One of the promising candidates is attenuated phase shirt type absorber which is effective for specific pattern shape such as contact hole. We developed novel high reflective phase shift type absorber. In this paper, we will report the blank and mask properties for this high reflective phase shift type absorber material.

Paper Details

Date Published: 24 March 2020
Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132311 (24 March 2020); doi: 10.1117/12.2550941
Show Author Affiliations
Yohei Ikebe, HOYA Corp. (Japan)
Osamu Nozawa, HOYA Corp. (Japan)
Takahiro Onoue, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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