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Proceedings Paper

Perspectives and tradeoffs of novel absorber materials for high NA EUV lithography (Conference Presentation)

Paper Abstract

Pushing the novel anamorphic NA=0.55 EUV projection optics to k1 values below 0.4 and to its ultimate resolution limit will require an alternative mask absorber stack. This paper describes the application of rigorous imaging simulations in combination with multi-objective optimization to access the performance of novel absorber materials for the NA=0.55 system. Simulations of various use cases and material options indicate two main types of solutions: high k materials (k>0.05, especially for vertical lines/spaces) and low n materials (n ~ 0.9) to provide phase shift mask solutions for contact arrays.

Paper Details

Date Published: 24 March 2020
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Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132309 (24 March 2020); doi: 10.1117/12.2550882
Show Author Affiliations
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Hazem Mesilhy, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Vicky Philipsen, IMEC (Belgium)
Frank Timmermans, ASML Netherlands B.V. (Netherlands)
Markus Bauer, Carl Zeiss SMT GmbH (Germany)


Published in SPIE Proceedings Vol. 11323:
Extreme Ultraviolet (EUV) Lithography XI
Nelson M. Felix; Anna Lio, Editor(s)

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