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Proceedings Paper

High-voltage high-current vertical geometry Ga2O3 rectifiers
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Paper Abstract

There are continuing rapid developments in vertical geometry Ga2O3 for high voltage switching applications. Ga2O3 is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping and the availability of large diameter, relatively inexpensive substrates. These include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are already cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy tremendous advantages in terms of process maturity, an advantage that is especially true for Si, where the ability to precisely process the material has resulted in devices such as super-junctions that surpass the unipolar “limit”. Continued development of low defect substrates, optimized epi growth and surface treatments and improved device design and processing methods for Ga2O3 are still required to push the experimental results closer to their theoretical values. Even 3 μm epi layers with doping concentration of 1016 cm-3 should have a theoretical breakdown voltage of ~1800V. The actual experimental value of VB is currently well below the theoretical predictions. Thermal management is a key issue in Ga2O3 power devices for practical high current devices and initial studies have appeared on both the experimental and theoretical fronts. We summarize progress in edge termination design, temperature measurement using thermoreflectance-based thermography to measure the thermal rise and decay of the active diodes, failure under forward bias and development of large current (up to 130A) arrays.

Paper Details

Date Published: 5 March 2020
PDF: 11 pages
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810J (5 March 2020); doi: 10.1117/12.2550769
Show Author Affiliations
Minghan Xian, Univ. of Florida (United States)
Chaker Fares, Univ. of Florida (United States)
Patrick Carey IV, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
Marko Tadjer, U.S. Naval Research Lab. (United States)
Yu-Te Liao, National Chiao Tung Univ. (Taiwan)
Chin-Wei Chang, Univ. of Florida (United States)
Jenshan Lin, Univ. of Florida (United States)
Ribhu Sharma, Univ. of Florida (United States)
Mark E. Law, Univ. of Florida (United States)
Peter E. Raad, Southern Methodist Univ. (United States)
TMX Scientific Inc. (United States)
Pavel L. Komarov, TMX Scientific Inc. (United States)
Zahabul Islam, The Pennsylvania State Univ. (United States)
Aman Haque, The Pennsylvania State Univ. (United States)
Akito Kuramata, Tamura Corp. (Japan)
Novel Crystal Technology, Inc. (Japan)
S. J. Pearton, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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