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Proceedings Paper

Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study
Author(s): Kai Ding; Vitaliy Avrutin; Natalia Izyumskaya; Ümit Özgür; Hadis Morkoç
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Paper Abstract

Previously we have conducted researches on the molecular beam epitaxy (MBE) of Zn-polar BeMgZnO/ZnO heterostructure field effect transistor (HFET) structures on GaN templates, which exhibit both high two-dimensional gas (2DEG) density and high electron mobility with relatively low Mg contents via the strain modulation of Be and Mg co-incorporation. In this contribution, we report on the growth of the HFET structures directly on sapphire substrate by employing a buffer consisting of a rock-salt structure MgO layer, a low-temperature (LT) ZnO layer and a high-temperature (HT) ZnO layer. Compared with growth of O-polar on sapphire, in which a thin and wurtzite MgO buffer is deposited at high temperatures above 700 °C, the MgO buffer for Zn-polar growth has to be reduced to 450 °C, in order to obtain smooth interface and surface for the BeMgZnO/ZnO HFETs. The residual electron sheet concentration in Zn-polar ZnO layers is ~2×1012 cm-2 on GaN while semi-insulating Zn-polar ZnO layers on sapphire have been obtained via controlling the buffer growth conditions, which is vital to the realization of HFET device structures.

Paper Details

Date Published: 5 March 2020
PDF: 7 pages
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112811Q (5 March 2020); doi: 10.1117/12.2550534
Show Author Affiliations
Kai Ding, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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