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Proceedings Paper

Strain-induced waveguide integrated MoTe2 photodetector at 1550 nm (Conference Presentation)
Author(s): Rishi Maiti; Chandraman Patil; Ti Xie; Volker J. Sorger

Paper Abstract

In this work, we demonstrate a photodetector (PD) based on heterogeneous integration of Few-layer MoTe2 integrated on planarized and non-planarized Si waveguide operating at 1550 nm. Under a strong local tensile strain (4%), the bandgap of few layers MoTe2 shifts from 1 eV to 0.8 eV, enabling higher responsivity as compared to unstrained one.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11282, 2D Photonic Materials and Devices III, 112820N (10 March 2020); doi: 10.1117/12.2550283
Show Author Affiliations
Rishi Maiti, The George Washington Univ. (United States)
Chandraman Patil, The George Washington Univ. (United States)
Ti Xie, The George Washington Univ. (United States)
Volker J. Sorger, The George Washington Univ. (United States)


Published in SPIE Proceedings Vol. 11282:
2D Photonic Materials and Devices III
Arka Majumdar; Carlos M. Torres Jr.; Hui Deng, Editor(s)

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