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Proceedings Paper

Design of photonic light-trapping structures for ultra-thin solar cells
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Paper Abstract

Ultra-thin (< 100 nm absorber thickness) GaAs cells are a promising avenue for the design of solar cells with increased radiation tolerance for space applications. To address the high transmission loss through such thin absorber layers, rigorous coupled-wave analysis and a semi-analytical waveguide model are used to investigate the effectiveness of silver/dielectric hexagonal grating structures placed on the back of a thin (86 nm) GaAs cell. The grating is formed of silver disks in a dielectric (SiNχ), and simulations indicate an optimum period of 600-700 nm with a grating thickness around 100 nm. Using the results of external quantum efficiency and light current-voltage measurements of thin devices without light-trapping features, predicted efficiencies for cells with a grating structure are found to be up to double that of the cells without light-trapping designs, showing a significant potential for current enhancement through light-trapping.

Paper Details

Date Published: 3 March 2020
PDF: 10 pages
Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750T (3 March 2020); doi: 10.1117/12.2550136
Show Author Affiliations
Phoebe Pearce, Imperial College London (United Kingdom)
Larkin Sayre, Univ. of Cambridge (United Kingdom)
Andrew Johnson, IQE plc (United Kingdom)
Louise Hirst, Univ. of Cambridge (United Kingdom)
Nicholas Ekins-Daukes, The Univ. of New South Wales (Australia)

Published in SPIE Proceedings Vol. 11275:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
Alexandre Freundlich; Masakazu Sugiyama; Stéphane Collin, Editor(s)

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