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Proceedings Paper

Self-assembled and selective-area growth of GaN nanorods by liquid-target reactive magnetron sputter epitaxy (Conference Presentation)
Author(s): Ching-Lien Hsiao; Elena Alexandra Serban; Justinas Palisaitis; Muhammad Junaid; Lars Hultman; Per O. Å. Persson; Jens Birch

Paper Abstract

Magnetron sputter epitaxy (MSE) is the standard process for the deposition of a wide range of industrially relevant coatings, operating with a low-energy ion assistance to minimize ion damage of the material, thus enabling fabrication of high-quality semiconductor materials for the optoelectronics. However, reports on the growth of GaN nanostructures by MSE are much less in comparison with molecular-beam epitaxy and metal-organic chemical vapor deposition. Here, we will present the study on the growth of single-crystal GaN nanorods by MSE using liquid Ga target. The talk will contain three parts: 1) the handling of liquid Ga target during sputtering; 2) self-assembled growth of GaN nanorods on cost-effective substrates; and 3) selective-area growth of GaN nanorods assisted by patterned substrates. Characterizations on structural and optical properties of the MSE-grown nanorods as well as the growth mechanism from nucleation stage to well-developed nanorods will be discussed.

Paper Details

Date Published: 9 March 2020
Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020G (9 March 2020); doi: 10.1117/12.2550015
Show Author Affiliations
Ching-Lien Hsiao, Linköping Univ. (Sweden)
Elena Alexandra Serban, Linköping Univ. (Sweden)
Justinas Palisaitis, Linköping Univ. (Sweden)
Muhammad Junaid, Linköping Univ. (Sweden)
Lars Hultman, Linköping Univ. (Sweden)
Per O. Å. Persson, Linköping Univ. (Sweden)
Jens Birch, Linköping Univ. (Sweden)

Published in SPIE Proceedings Vol. 11302:
Light-Emitting Devices, Materials, and Applications XXIV
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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