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Proceedings Paper

Solar-blind photodetectors based on Ga2O3 and III-nitrides
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Paper Abstract

Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga2O3 thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga2O3. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a −2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ~100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors.

Paper Details

Date Published: 31 January 2020
PDF: 11 pages
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128803 (31 January 2020); doi: 10.1117/12.2549606
Show Author Affiliations
Ryan McClintock, Northwestern Univ. (United States)
Alexander Jaud, Northwestern Univ. (United States)
Lakshay Gautam, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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