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Bipolar resistive switching of Ge2Sb2Te5 material
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Paper Abstract

In this paper, the bipolar resistive switching properties of Ge2Sb2Te5 material are studied. By changing the voltage step, compliance current, cycle number and other parameters, the characteristics of the resistive switching voltage, switching ratio, switching polarity and cycle repetition of Ge2Sb2Te5 were tested. The experimental results show that the Ge2Sb2Te5 material film exhibit reversible and reproducible bi-stable resistive switching with lower threshold voltage. The reversible resistance switching between HRS and LRS was induced by bias amplitude and polarity. The electrical resistance ratio of HRS/LRS was ~80:1. After 100 test cycles, the ratio of high resistance state (HRS) and low resistance state (LRS) is not obviously changed, which indicates that the Ge2Sb2Te5 material has excellently nonvolatile bipolar resistance storage characteristics.

Paper Details

Date Published: 20 December 2019
PDF: 5 pages
Proc. SPIE 11209, Eleventh International Conference on Information Optics and Photonics (CIOP 2019), 1120939 (20 December 2019); doi: 10.1117/12.2548815
Show Author Affiliations
Zhai Fengxiao, Zhengzhou Univ. of Light Industry (China)
Yunqi Hao, Zhengzhou Univ. of Light Industry (China)
Liu Nannan, Zhengzhou Univ. of Light Industry (China)
Gao Xiaokai, Zhengzhou Univ. of Light Industry (China)
Liu Sujuan, Zhengzhou Univ. of Light Industry (China)
Kun Yang, Zhengzhou Univ. of Light Industry (China)


Published in SPIE Proceedings Vol. 11209:
Eleventh International Conference on Information Optics and Photonics (CIOP 2019)
Hannan Wang, Editor(s)

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