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Proceedings Paper

Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation)

Paper Abstract

Magnesium oxide (MgO) is a promising dielectric for use with GaN due its similar crystal structure and lattice constant, large bandgap, and high dielectric constant. We report on the structural properties of MgO films deposited on GaN templates on sapphire substrates via the atomic layer deposition (ALD) technique. Analysis of the crystal quality and structure as a function of surface treatment and growth temperature are presented. I-V and C-V measurements of MgO/GaN metal-oxide-semiconductor capacitance structures are also presented.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112811R (10 March 2020); doi: 10.1117/12.2548753
Show Author Affiliations
Justin Goodrich, Lehigh Univ. (United States)
Onoriode N. Ogidi-Ekoko, Lehigh Univ. (United States)
Thomas Farinha, Univ. of Maryland, College Park (United States)
Alexandra Howzen, Lehigh Univ. (United States)
Animesh Kundu, Lehigh Univ. (United States)
Jonathan J. Wierer, Lehigh Univ. (United States)
Nicholas Strandwitz, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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