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Proceedings Paper

Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation)
Author(s): Justin Goodrich; Hanlin Fu; Damir Borovac; Nelson Tansu

Paper Abstract

Experimental measurements of optical and crystallinity properties of MOCVD-grown quaternary AlGaInN lattice-matched to GaN are presented. The bandgaps, carrier life times, optical constants (n vs. k), doping profiles, effective masses, and structural and surface information from XRD and AFM are presented. This study reports important material parameters for the alloy, which will be key in the design and application of these alloys for UV and visible spectral regime optoelectronic devices.

Paper Details

Date Published: 10 March 2020
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128005 (10 March 2020); doi: 10.1117/12.2548752
Show Author Affiliations
Justin Goodrich, Lehigh Univ. (United States)
Hanlin Fu, Lehigh Univ. (United States)
Damir Borovac, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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