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Proceedings Paper

InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)
Author(s): Hanlin Fu; Damir Borovac; Justin Goodrich; Onoriode Ogidi-Ekoko; Nelson Tansu

Paper Abstract

The self-consistent 6-band k∙p calculations of AlGaInN barriers surrounding the InGaN quantum well (QW) emitting at ~495 nm show ~ 30% increase in material gain and ~ 40% reduction in threshold current density, compared to the conventional InGaN / GaN QW structure. Following the guidance of our computational study, the InGaN / AlGaInN multiple QW structures with different AlGaInN alloy compositions lattice-matched to GaN are grown via MOVPE. The use of InGaN / AlInN QW structure resulted in improved luminescence, and the results of InGaN / AlGaInN with larger compositional range will also be presented.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130103 (9 March 2020); doi: 10.1117/12.2548652
Show Author Affiliations
Hanlin Fu, Lehigh Univ. (United States)
Damir Borovac, Lehigh Univ. (United States)
Justin Goodrich, Lehigh Univ. (United States)
Onoriode Ogidi-Ekoko, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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