The self-consistent 6-band k∙p calculations of AlGaInN barriers surrounding the InGaN quantum well (QW) emitting at ~495 nm show ~ 30% increase in material gain and ~ 40% reduction in threshold current density, compared to the conventional InGaN / GaN QW structure. Following the guidance of our computational study, the InGaN / AlGaInN multiple QW structures with different AlGaInN alloy compositions lattice-matched to GaN are grown via MOVPE. The use of InGaN / AlInN QW structure resulted in improved luminescence, and the results of InGaN / AlGaInN with larger compositional range will also be presented.

Date Published: 9 March 2020
PDF
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130103 (9 March 2020); doi: 10.1117/12.2548652

Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)