
Proceedings Paper
InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)
Paper Abstract
The self-consistent 6-band k∙p calculations of AlGaInN barriers surrounding the InGaN quantum well (QW) emitting at ~495 nm show ~ 30% increase in material gain and ~ 40% reduction in threshold current density, compared to the conventional InGaN / GaN QW structure. Following the guidance of our computational study, the InGaN / AlGaInN multiple QW structures with different AlGaInN alloy compositions lattice-matched to GaN are grown via MOVPE. The use of InGaN / AlInN QW structure resulted in improved luminescence, and the results of InGaN / AlGaInN with larger compositional range will also be presented.
Paper Details
Date Published: 9 March 2020
PDF
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130103 (9 March 2020); doi: 10.1117/12.2548652
Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 1130103 (9 March 2020); doi: 10.1117/12.2548652
Show Author Affiliations
Hanlin Fu, Lehigh Univ. (United States)
Damir Borovac, Lehigh Univ. (United States)
Justin Goodrich, Lehigh Univ. (United States)
Damir Borovac, Lehigh Univ. (United States)
Justin Goodrich, Lehigh Univ. (United States)
Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)
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