Share Email Print
cover

Proceedings Paper

The GaSb-based Y-branch DBR and photonic crystal lasers (Conference Presentation)

Paper Abstract

We report on development of the mid-infrared antimonide based laser technology targeting dual wavelength operation for intra-cavity difference frequency generation. The devices utilize Y-branch architecture with high order DBR reflectors controlling the laser emission spectrum. The device active region contain asymmetric tunnel coupled quantum well with built in resonant second order nonlinearity. The epitaxially regrown photonic crystal surface emitting GaSb-based lasers will be demonstrated.

Paper Details

Date Published: 9 March 2020
PDF
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011M (9 March 2020); doi: 10.1117/12.2548623
Show Author Affiliations
Leon Shterengas, Stony Brook Univ. (United States)
Jiang Jiang, Stony Brook Univ. (United States)
Takashi Hosoda, Stony Brook Univ. (United States)
Aaron Stein, Brookhaven National Lab. (United States)
Alexey Belyanin, Texas A&M Univ. (United States)
Ruiyan Liu, Stony Brook Univ. (United States)
Wonjae Lee, Stony Brook Univ. (United States)
Gela Kipshidze, Stony Brook Univ. (United States)
Gregory Belenky, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray