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Proceedings Paper

High speed short wavelength infrared heterojunction phototransistors based on type II superlattices
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Paper Abstract

A two terminal short wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb on GaSb substrate are designed fabricated and presented. With the base thickness of 40 nm, the device exhibited 100% cut-off wavelengths of ~2.3 μm at 300K. The saturated peak responsivity value is of 325.5 A/W at 300K, under front-side illumination without any anti-reflection coating. A saturated optical gain at 300K was 215 a saturated dark current shot noise limited specific detectivity of 4.9×1011 cm·Hz1/2/W at 300 K was measured. Similar heterojunction phototransistor structure was grown and fabricated with different method of processing for high speed testing. For 80μm diameter circular diode size under 20 V applied reverse bias, a -3 dB cut-off frequency of 1.0 GHz was achieved, which showed the potential of type-II superlattice based heterojunction phototransistors to be used for high speed detection.

Paper Details

Date Published: 31 January 2020
PDF: 11 pages
Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128813 (31 January 2020); doi: 10.1117/12.2548611
Show Author Affiliations
Jiakai Li, Northwestern Univ. (United States)
Arash Dehzangi, Northwestern Univ. (United States)
Donghai Wu, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 11288:
Quantum Sensing and Nano Electronics and Photonics XVII
Manijeh Razeghi; Jay S. Lewis; Giti A. Khodaparast; Pedram Khalili, Editor(s)

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