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ArF*, KrF*, and FI lasers pumped by double discharge from generator with semiconductor opening switch
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Paper Abstract

Discharge and laser parameters in high-pressure gas mixtures of rare gases with F2 under pumping by generators with inductive energy storage (IES) and semiconductor opening switch (SOS) are studied. It was shown that the pre-pulse with high pumping power formed by IES produces high-density discharge plasma and inversion population in gas mixtures under study within ∼10 ns and provides both early one-set of lasing and conditions for efficient excitation of an active medium from the storage capacitor. The high-voltage pre-pulse from the IES and sharp increase of discharge current allows to form long-lived stable volume discharge. Improve of pulse duration and (or) output energy was achieved for atomic fluorine, ArF* and KrF* excimer lasers.

Paper Details

Date Published: 11 December 2019
PDF: 6 pages
Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113222S (11 December 2019); doi: 10.1117/12.2548394
Show Author Affiliations
Alexei N. Panchenko, Institute of High Current Electronics (Russian Federation)
Victor F. Tarasenko, Institute of High Current Electronics (Russian Federation)
National Research Tomsk State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11322:
XIV International Conference on Pulsed Lasers and Laser Applications
Victor F. Tarasenko; Anton V. Klimkin; Maxim V. Trigub, Editor(s)

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