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Proceedings Paper

GaAs nano-ridge lasers on silicon (Conference Presentation)

Paper Abstract

The silicon photonics platform is still missing a native source. Therefore, using a novel epitaxial process based on aspect ratio trapping and nano-ridge engineering we demonstrated an powerfull approach to fabricate GaAs-InGaAs lasers directly on a standard silicon substrate. In depth morphological and optical characterisation confirms the high quality of the material. We demonstrated lasing from DFB-type devices with etched gratings and with metal gratings. In the presentation we will also discuss the possibility for coupling to standard silicon waveguides and for extending the emission to longer wavelengths.

Paper Details

Date Published: 9 March 2020
Proc. SPIE 11284, Smart Photonic and Optoelectronic Integrated Circuits XXII, 112840D (9 March 2020); doi: 10.1117/12.2548320
Show Author Affiliations
Dries Van Thourhout, Univ. Gent - IMEC (Belgium)
Yuting Shi, Univ. Gent - IMEC (Belgium)
Marina Baryshnikova, IMEC (Belgium)
Yannick De Koninck, IMEC (Belgium)
Marianna Pantouvaki, IMEC (Belgium)
Joris Van Campenhout, IMEC (Belgium)
Bernardette Kunert, IMEC (Belgium)

Published in SPIE Proceedings Vol. 11284:
Smart Photonic and Optoelectronic Integrated Circuits XXII
Sailing He; Laurent Vivien, Editor(s)

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