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Analysis of the influence of technological parameters on electrophysical and frequency characteristics of RF MEMS
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Paper Abstract

The creation of effective procedures for the design and fabrication of RF MEMS switches with specified electrophysical properties for operation in different frequency ranges is an urgent task. This is due to the widespread use of RF MEMS in various fields of microelectronics. The task is complicated by the fact that, based on the areas of application, different variants of technologies, materials, topological and structural solutions are used to create RF MEMS switches. The article proposes a method of design and fabrication of RF MEMS switch with specified properties based on creating a model of micromechanical switch, taking into account significant technological parameters, properties of materials and options for structural and topological solutions. For the selected three groups of factors, the analysis of the main characteristics and parameters affecting the electrophysical and frequency properties of RF MEMS switch is carried out. The analysis of technological processes of fabrication allowed determining the influence of the non-etched photoresist layer on such electrophysical characteristics as the capacity of the switch in the up- and down-state. The analysis of the properties of materials, the influence of thickness changes in the formation of the dielectric layer and membrane, as well as the thickness of the gap between the membrane and the dielectric layer on the electrophysical and frequency properties of RF MEMS switch. It is established that the most significant parameters affecting the formation of the frequency characteristics of the switch is the change in its geometric dimensions. The developed model RF-MEMS switch, which takes into account the interaction highlighted important properties and relations with the electrical and frequency characteristics of RF MEMS switch. Modeling and analysis of the following characteristics (consequences of the model) RF MEMS switch.

Paper Details

Date Published: 16 October 2019
PDF: 9 pages
Proc. SPIE 11163, Emerging Imaging and Sensing Technologies for Security and Defence IV, 111630L (16 October 2019); doi: 10.1117/12.2547827
Show Author Affiliations
Andrey M. Belevtsev, Moscow Aviation Institute (Russian Federation)
Irina K. Epaneshnikova, Moscow Aviation Institute (Russian Federation)
Vasiliy L. Kruchkov, Moscow Aviation Institute (Russian Federation)
Ivan O. Dryagin, Moscow Aviation Institute (Russian Federation)
Vladimir F. Lukichev, Valiev Institute of Physics and Technology (Russian Federation)
Anton S. Boldyreff, Southern Federal Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 11163:
Emerging Imaging and Sensing Technologies for Security and Defence IV
Gerald S. Buller; Richard C. Hollins; Robert A. Lamb; Martin Laurenzis, Editor(s)

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