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Proceedings Paper

Study of in situ laser modification of Ga-droplets
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Paper Abstract

In this paper, we report the study on the size regulation of Ga-droplets by in situ laser irradiation. Gallium (Ga) droplets are grown on GaAs (001) substrate by molecular beam epitaxy (MBE) and the in situ laser irradiation is carried out by using an ultraviolet pulsed laser. The results show that: The laser irradiation will cause the expansion of Ga-droplets and then the adjacent Ga-droplets can touch with each other and larger Ga-droplets can be formed by the fusion of two or more droplets. So the size of Ga-droplets can be re-modified by laser irradiation and such modification is positively correlated with the irradiation intensity. In other words, we can easily define the size of Ga-droplets by using different laser irradiation energy.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11336, AOPC 2019: Nanophotonics, 113360R (18 December 2019);
Show Author Affiliations
Xinning Yang, Soochow Univ. (China)
Linyun Yang, Soochow Univ. (China)
Lili Miao, Soochow Univ. (China)
Siyi Zhuang, Soochow Univ. (China)
Zhenwu Shi, Soochow Univ. (China)
Changsi Peng, Soochow Univ. (China)
Univ. of Bedfordshire (United Kingdom)


Published in SPIE Proceedings Vol. 11336:
AOPC 2019: Nanophotonics
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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