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Optimization of InGaN/GaN heterostructure solar cell with incorporation of GaN interlayer
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Paper Abstract

The III-Nitride material system offers significant potential in developing high efficiency solar cells (SC) due to their tunable bandgap (0.7 eV- 3.42 eV) with varying indium (In) concentration. Few characteristics of InGaN include wide and direct bandgap (Eg), high absorption coefficient (105 cm-1) and longer lifetimes. In this paper, InGaN/GaN SC with incorporation of GaN interlayers in absorber layer with an In content of 0.10 has been modeled and studied. InGaN is used as absorber, whereas GaN is used as window layers and strain reducing layer within the absorber layer. Increased P-GaN layer thickness increases short circuit current density (Jsc) to 2.5 mAcm-2, but lowers the open circuit voltage (Voc) to 2.11 V. GaN layer is taken to be thin enough to allow tunneling between InGaN layers and thick enough to be effective. Increase in GaN thickness increases Voc and decreases Jsc. Jsc is higher for smaller thickness of InGaN whereas Voc is higher for thicker absorber layer. The n-GaN layer thickness does not play important role in absorption of carrier. The Voc and Jsc of the device are 2.52 V and 0.653 mAcm-2, respectively.

Paper Details

Date Published: 18 December 2019
PDF: 7 pages
Proc. SPIE 11336, AOPC 2019: Nanophotonics, 113360J (18 December 2019); doi: 10.1117/12.2547678
Show Author Affiliations
Deborah Eric, Beijing Institute of Technology (China)
Jianliang Jiang, Beijing Institute of Technology (China)
Ali Imran, Peking Univ. (China)
Muhammad Noaman Zahid, Beijing Institute of Technology (China)
Abbas Ahmad Khan, Beijing Institute of Technology (China)


Published in SPIE Proceedings Vol. 11336:
AOPC 2019: Nanophotonics
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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