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Proceedings Paper

Study of in situ laser modification of InAs/GaAs quantum dots
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Paper Abstract

We have investigated the modification of self-assembled InAs/GaAs quantum dots (QDs) by in situ pulsed laser irradiation. The QDs were fabricated by molecular beam epitaxy (MBE) in Stranski-Krastanov mode at 480℃ and then at the same temperature the pulsed laser was in situ introduced to modify the QDs with different energy. The dependence of morphology evolution on irradiation energy was carefully studied by AFM testing. The results show that laser excitation can enable both desorption and diffusion of In atoms which may induce strong modification on the InAs QDs. For irradiation of a moderate energy, the 3D dot-like InAs QD will transform into 2D oval-shaped island; Once the irradiation energy is high enough, the InAs QDs will be completely removed off from the surface. The involved mechanism is also discussed. Herein, we have proposed a new approach of fabricating QDs which is high-efficient, pollution-free, oxidation-free and defect-resistant and it is believed in the near future, it may find wide applications in both the fundamental physics research and emerging device manufacture.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11339, AOPC 2019: Quantum Information Technology, 113390H (18 December 2019); doi: 10.1117/12.2547676
Show Author Affiliations
Lili Miao, Soochow Univ. (China)
Linyun Yang, Soochow Univ. (China)
Xinning Yang, Soochow Univ. (China)
Siyi Zhuang, Soochow Univ. (China)
Zhenwu Shi, Soochow Univ. (China)
Changsi Peng, Soochow Univ. (China)
Univ. of Bedfordshire (United Kingdom)

Published in SPIE Proceedings Vol. 11339:
AOPC 2019: Quantum Information Technology
Jianyu Wang; Chaoyang Lu; Sven Höfling, Editor(s)

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