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Proceedings Paper

Solution-processed photodetector based on Br incorporated perovskite materials
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Paper Abstract

Mixing of anions (I/Br) in metal halides perovskite for photodetectors attracted much attention due to their inexpensive fabrication and vast optoelectronic properties. The main objective of this compositional anion mixing (I/Br) is to improve the stability of bromide-iodide based perovskite devices. A bilayer lateral MAPbI3-xBrx/TiO2 photodetector is designed to observe the performance and stability of the device by changing the ratio of anion. Responsivity, detectivity, and ON/OFF ratio of the photodetector devices are calculated by changing the anion composition. An appropriate (MAPbI2Br) bromide-iodide ratio promotes the crystallization of film and increases stability of photodetector device from ambient environment. By changing the anion ratio, band gap of MAPbI3-xBrx thin films are changed from 1.59 eV to 2.33 eV. Responsivity calculated for MAPbI3, MAPbBr3, MAPbI2Br, and MAPbIBr2 devices are 5.22 A/W, 0.23 A/W, 1.86 A/W, and 0.70 A/W, respectively, under light illumination of 0.1 mW cm-2. Under a bias of 5 V, the value of detectivity for MAPbI3, MAPbBr3, MAPbI2Br, and MAPbIBr2 devices are 2.88 × 1013 J, 1.7 × 1012 J, 1.4 × 1013 J, and 5.95 × 1012 J, respectively. Changing anion composition also affects the on/off ratio of the devices. MAPbI3, MAPbBr3, MAPbI2Br, and MAPbIBr2 devices show on/off ratio of 5 × 103, 400, 3.6 × 103, 1.6 × 103, respectively.

Paper Details

Date Published: 18 December 2019
PDF: 8 pages
Proc. SPIE 11336, AOPC 2019: Nanophotonics, 113360H (18 December 2019); doi: 10.1117/12.2547655
Show Author Affiliations
Abbas Ahmad Khan, Beijing Institute of Technology (China)
Zhinong Yu, Beijing Institute of Technology (China)
Ubaid Khan, Beijing Institute of Technology (China)
Yan Li, Beijing Institute of Technology (China)
Deborah Eric, Beijing Institute of Technology (China)


Published in SPIE Proceedings Vol. 11336:
AOPC 2019: Nanophotonics
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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