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Multi-layer stacks of GaN/n-Al0.5GaN self-assembled quantum dots grown by metal-organic chemical vapor deposition
Author(s): Fei Wu; Zhiqiang Qi
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Paper Abstract

The growth of multi-layer stacks of GaN QDs on n-doped Al0.5GaN template by metal organic chemical vapor phase deposition has been investigated. A two-step growth technique consisting of a low temperature method and high temperature method has been employed to deposit the n-Al0.5GaN spacer-layer over GaN QDs. The third-layer GaN quantum dots with 22nm low temperature and 15nm high temperature Al0.5GaN spacer-layer show uniform-size and excellent optical performance. The photo-luminescence suggests that the peak intensity of GaN QDs with two-step grown spacer-layer has been overall enhanced significantly compared to the low temperature grown spacer-layer with the same thickness.

Paper Details

Date Published: 18 December 2019
PDF: 6 pages
Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 1133413 (18 December 2019); doi: 10.1117/12.2547648
Show Author Affiliations
Fei Wu, Central China Normal Univ. (China)
Huazhong Institute of Electro-Optics (China)
Zhiqiang Qi, Huazhong Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 11334:
AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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