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Proceedings Paper

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition
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Paper Abstract

We present an investigation on the stability of high periodicity (30 pairs) multiple quantum well InGaN-GaN devices for photodetection and light harvesting in the UV and visible spectral range. The devices under test were characterized during optical stress by I-V measurements in dark condition and illuminated with a monochromatic LD emitting at 405 nm with intensities ranging from 1 mW/cm2 to 50 W/cm2. We submitted the devices to several step-stress experiments: a first one in short-circuit condition at 100 °C baseplate temperature with monochromatic excitation from 361 W/cm2 to 1164 W/cm2; a second one at fixed optical power of 589 W/cm2 and baseplate temperature increasing from 35°C to 175 °C. We also evaluated the carrier flow induced degradation by means of a current stress, ranging from 1 A/cm2 to 14 A/cm2 , without optical excitation. We then performed a 50 hours stress at 175 °C baseplate temperature and 589.3 W/cm2 excitation. During this stress the open-circuit voltage and the optical-to-electrical conversion efficiency significantly decreased, especially at low characterization intensities, whereas short-circuit current and external quantum efficiency showed almost no variation.

Paper Details

Date Published: 16 February 2020
PDF: 9 pages
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800E (16 February 2020); doi: 10.1117/12.2547590
Show Author Affiliations
Alessandro Caria, Univ. degli Studi di Padova (Italy)
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Filippo Zamperetti, Univ. degli Studi di Padova (Italy)
Xuanqi Huang, Arizona State Univ. (United States)
Houqiang Fu, Arizona State Univ. (United States)
Hong Chen, Arizona State Univ. (United States)
Yuji Zhao, Arizona State Univ. (United States)
Gaudenzio Meneghesso, Univ. degli Studi di Padova (Italy)
Enrico Zanoni, Univ. degli Studi di Padova (Italy)
Matteo Meneghini, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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