Share Email Print
cover

Proceedings Paper

Electronic coupling in ZnO asymmetric quantum wells for intersubband cascade devices
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Recently Zinc Oxide has received a renewed attention for the realization of intersubband devices such as quantum cascade lasers (QCLs). Indeed this material is predicted to be able to tackle the main limitation of current terahertz (THz) QCLs: the limited operation temperature. We report the observation of electronic coupling within ZnO/(Zn, Mg)O asymmetric quantum wells (QWs), first step towards this goal. Samples were grown by molecular beam epitaxy (MBE) with surfaces down to 0.4 nm. X-ray reflectivity (XRR) was used for thickness measurements checking and for the investigation of the interface quality. Atomic resolution scanning transmission electron microscopy (STEM) images reveals that we are able to grow 2 monolayers (MLs) thin (Zn, Mg)O barriers in a reproducible way while keeping abrupt interfaces. Room temperature (RT) photoluminescence (PL) spectra show that QWs are still coupled when separated by a 1.0 nm thick barrier. On the contrary, a 4.0 nm thick barrier allows no coupling. Doped samples were investigated by absorption experiment. Absorption spectra were successfully fitted by a theoretical model, proving a clear electronic coupling in our heterostructures. This demonstration allows us to seriously envision the realization of ZnO based intersubband devices.

Paper Details

Date Published: 5 March 2020
PDF: 9 pages
Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112811S (5 March 2020); doi: 10.1117/12.2547478
Show Author Affiliations
N. Le Biavan, Univ. Côte d'Azur, CNRS, CRHEA (France)
B. Meng, ETH Zurich (Switzerland)
M. Montes Bajo, Univ. Politécnica de Madrid (Spain)
J. Tamayo-Arriola, Univ. Politécnica de Madrid (Spain)
A. Torres-Pardo, Univ. Complutense de Madrid (Spain)
D. Lefebvre, Univ. Côte d'Azur, CNRS, CRHEA (France)
M. Hugues, Univ. Côte d'Azur, CNRS, CRHEA (France)
A. Hierro, Univ. Politécnica de Madrid (Spain)
J. Faist, ETH Zurich (Switzerland)
J.-M. Chauveau, Univ. Côte d'Azur, CNRS, CRHEA (France)


Published in SPIE Proceedings Vol. 11281:
Oxide-based Materials and Devices XI
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray