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Proceedings Paper

Tapered amplifiers for high-power MOPA setups between 750 nm and 2000 nm
Author(s): L. Ogrodowski; P. Friedmann; J. Gilly; M. T. Kelemen
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Paper Abstract

Semiconductor laser diodes with a tapered gain region provide a beam quality near to the diffraction limit combined with high output power. They can be configured as lasers with a high-reflectivity coating on the rear facet as well as amplifiers with an antireflection coating on both facets. In amplifier configuration, they can be used in external cavity or Master-Oscillator-Power-Amplifier configuration with the advantage of a narrow linewidth. Today amplifiers are commercially established with an optical output-power of 1-3W in a wide range of applications in quantum optics, metrology or spectroscopy. By extension of the resonator length up to 5mm combined with optimised processing and coating a new class of high-power tapered amplifiers at different wavelengths between 750nm and 1060nm for master-oscillator- power amplifier configurations of 4-5W output power will be presented. In addition, the tapered concept has been successfully transferred to InP and GaSb based material systems to address the eye-safe spectral range between 1500 and 2000nm. Nearly diffraction limited tapered amplifiers and lasers will be demonstrated in the 1W power range for 1530nm, 1550nm and 1930nm.

Paper Details

Date Published: 24 February 2020
PDF: 11 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011E (24 February 2020);
Show Author Affiliations
L. Ogrodowski, Coherent-DILAS GmbH (Germany)
P. Friedmann, Coherent-DILAS GmbH (Germany)
J. Gilly, Coherent-DILAS GmbH (Germany)
M. T. Kelemen, Coherent-DILAS GmbH (Germany)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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