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Proceedings Paper

THz emission from semiconductors using excitation by a tilted pulse front
Author(s): Q. Islam; F. Meng; H. Yuan; H. G. Roskos
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Paper Abstract

We employ tilted-pulse-front techniques to control the propagation direction of the THz pulses emitted from semiconductor photo-switches. In a first step, we successfully demonstrate the manipulation of the THz emission angle from an electrically biased, large-area photoconductive switch on semi-insulating GaAs. With a double-metal waveguide with an optically transparent thin metal window we then show that, at a proper tilt angle of the optical pulse front, the generated THz pulse propagates along the waveguide to radiate off at its end facet. The technique is suitable for optical pumping of THz gain media with short excited-state lifetime, and for THz pulse control and beam steering using any type of coherent THz emitters.

Paper Details

Date Published: 2 March 2020
PDF: 6 pages
Proc. SPIE 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, 1127910 (2 March 2020); doi: 10.1117/12.2547307
Show Author Affiliations
Q. Islam, Goethe Univ. Frankfurt am Main (Germany)
F. Meng, Goethe Univ. Frankfurt am Main (Germany)
H. Yuan, Goethe Univ. Frankfurt am Main (Germany)
H. G. Roskos, Goethe Univ. Frankfurt am Main (Germany)


Published in SPIE Proceedings Vol. 11279:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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