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High-density and uniform-size GaN/Al0.5GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
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Paper Abstract

Self-assembled GaN/Al0.5GaN quantum dots (QDs) were grown on a c-plane sapphire by Stranski- Krastanov (S-K) mode in metalorganic vapor-phase epitaxy (MOCVD). The growth window for GaN QDs by S-K is very narrow owing to the small lattice mismatch (1.25%) of the GaN/Al0.5GaN. In this work, we find that the growth duration and growth interruption possess distinct and regular effects on the size and density of GaN/Al0.5GaN QDs, which can be utilized as growth optimization windows. In the end, the uniform-size GaN QDs with a density of 1.7×1010 cm-2 are achieved. A strong PL peak at 3.36eV originated from the uncapped GaN/Al0.5GaN QDs is observed, compared with the peak at 4.5eV assigned to the underlying Al0.5GaN template.

Paper Details

Date Published: 18 December 2019
PDF: 7 pages
Proc. SPIE 11336, AOPC 2019: Nanophotonics, 113360E (18 December 2019); doi: 10.1117/12.2547302
Show Author Affiliations
Zhiqiang Qi, Huazhong Institute of Electro-Optics (China)
Haocheng Sun, Huazhong Institute of Electro-Optics (China)
Wenliang Hu, Huazhong Institute of Electro-Optics (China)


Published in SPIE Proceedings Vol. 11336:
AOPC 2019: Nanophotonics
Zhiping Zhou; Xiao-Cong Yuan; Daoxin Dai, Editor(s)

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