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Proceedings Paper

Impact of top mirror power reflectance on 980-nm VCSEL performance (Conference Presentation)

Paper Abstract

980 nm VCSELs with different numbers of top dielectric DBR periods added to a 5.5-period top semiconductor DBR and with various oxide aperture diameters are investigated to determine the impact of the added dielectric DBR’s impact on the static and dynamic properties of the VCSELs. For VCSELs with the same oxide aperture diameter we observe smaller small-signal modulation bandwidth and lower D-factor for the VCSELs with more pairs of dielectric DBRs. For the VCSELs with 4 μm oxide aperture diameters with 8 and 12 periods of added top dielectric DBRs we measured bandwidths of 29 and 26 GHz, respectively.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000Q (9 March 2020); doi: 10.1117/12.2547300
Show Author Affiliations
Magdalena Marciniak, Lodz Univ. of Technology (Poland)
Technische Univ. Berlin (Germany)
Marcin Gebski, Lodz Univ. of Technology (Poland)
Technische Univ. Berlin (Germany)
Artur Broda, Institute of Electron Technology (Poland)
Jan Muszalski, Institute of Electron Technology (Poland)
Tomasz Czyszanowski, Lodz Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 11300:
Vertical-Cavity Surface-Emitting Lasers XXIV
Luke A. Graham; Chun Lei, Editor(s)

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