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Proceedings Paper

Sub-terahertz detection by fin-shaped GaN/AlGaN transistors
Author(s): P. Sai; D. B. But; G. Cywinski; M. Dub; M. Sakowicz; P. Prystawko; S. Rumyantsev; W. Knap
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Paper Abstract

We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors (FinFETs) with two lateral Schottky barrier gates exactly placed at the edges of the fin-shaped transistor channel. This kind of FinFET modification (called EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. Moreover, due to depletion, regions of the channel at a certain range of reverse bias form a nanowire, which is beneficial for the tunable resonant THz detection. Our studies of current-voltage characteristics and response in the sub-terahertz frequency range confirm the validity of the approach.

Paper Details

Date Published: 2 March 2020
PDF: 6 pages
Proc. SPIE 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, 1127905 (2 March 2020); doi: 10.1117/12.2547298
Show Author Affiliations
P. Sai, Institute of High Pressure Physics (Poland)
V. Ye. Lashkaryov Institute of Semiconductor Physics (Ukraine)
D. B. But, Institute of High Pressure Physics (Poland)
V. Ye. Lashkaryov Institute of Semiconductor Physics (Ukraine)
G. Cywinski, Institute of High Pressure Physics (Poland)
Warsaw Univ. of Technology (Poland)
M. Dub, Institute of High Pressure Physics (Poland)
V. Ye. Lashkaryov Institute of Semiconductor Physics (Ukraine)
M. Sakowicz, Institute of High Pressure Physics (Poland)
P. Prystawko, Institute of High Pressure Physics (Poland)
S. Rumyantsev, Institute of High Pressure Physics (Poland)
W. Knap, Institute of High Pressure Physics (Poland)
Warsaw Univ. of Technology (Poland)
Lab. Charles Coulomb, Univ. of Montpellier, CNRS (France)


Published in SPIE Proceedings Vol. 11279:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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