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Proceedings Paper

Advanced analysis for hot-carriers photoluminescence spectrum
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Paper Abstract

Photoluminescence spectroscopy is a powerful technique to investigate the properties of photo-generated hot carriers in materials in steady state conditions. Hot carrier temperature can be determined via fitting the emitted PL spectrum with the generalized Planck’s law. However, this analysis is not trivial, especially for nanostructured materials, such as quantum wells, with a modified density of states due to quantum confinement effects. Here, we present comprehensively different methods to determine carrier temperature via fitting the emitted PL spectrum with the generalized Planck’s law and discuss under what conditions it is possible to simplify the analysis.

Paper Details

Date Published: 3 March 2020
PDF: 8 pages
Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750A (3 March 2020); doi: 10.1117/12.2547244
Show Author Affiliations
Hamidreza Esmaielpour, Institut Photovoltaïque d'Ile-de-France (France)
Maxime Giteau, The Univ. of Tokyo (Japan)
Amaury Delamarre, C2N, CNRS, Univ. Paris-Sud/Paris-Saclay (France)
François Gibelli, CNRS, Institut Photovoltaique d’Ile de France (France)
Dac-Trung Nguyen, Institut Photovoltaïque d'Ile-de-France (France)
Nicolas Cavassilas, IM2NP, CNRS, Aix-Marseille Univ. (France)
Yoshitaka Okada, The Univ. of Tokyo (Japan)
Jean-François Guillemoles, Institut Photovoltaïque d'Ile-de-France (France)
CNRS, Institut Photovoltaïque d'Ile-de-France (France)
Laurent Lombez, Institut Photovoltaïque d'Ile-de-France (France)
CNRS, Institut Photovoltaïque d'Ile-de-France (France)
Daniel Suchet, CNRS, Ecole Polytechnique, Institut Photovoltaïque d'Ile-de-France (France)


Published in SPIE Proceedings Vol. 11275:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
Alexandre Freundlich; Masakazu Sugiyama; Stéphane Collin, Editor(s)

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