Passively mode-locked InAs/InGaAs quantum dot on silicon lasers emitting at 1310nm are promising sources for high-speed high-capacity communication applications. Optical self-injection stabilization of a monolithic passively mode-locked quantum dot on Silicon laser with an absorber section length to total length ratio of 18% is investigated experimentally. A repetition rate tuning range of 24MHz around the free-running repetition rate of 9.4 GHz and a pulse-to-pulse timing jitter reduction by a factor of 2.5 from 150 fs to 59 fs are achieved for an external optical cavity length of 5.8m with fine-delay control. Obtained experimental results are in good quantitative agreement with simulation results obtained by a stochastic time-domain model.

Date Published: 24 February 2020
PDF: 6 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010F (24 February 2020); doi: 10.1117/12.2547151

Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)