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Proceedings Paper

Optical self-injection stabilization of a passively mode-locked quantum dot on silicon laser
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Paper Abstract

Passively mode-locked InAs/InGaAs quantum dot on silicon lasers emitting at 1310nm are promising sources for high-speed high-capacity communication applications. Optical self-injection stabilization of a monolithic passively mode-locked quantum dot on Silicon laser with an absorber section length to total length ratio of 18% is investigated experimentally. A repetition rate tuning range of 24MHz around the free-running repetition rate of 9.4 GHz and a pulse-to-pulse timing jitter reduction by a factor of 2.5 from 150 fs to 59 fs are achieved for an external optical cavity length of 5.8m with fine-delay control. Obtained experimental results are in good quantitative agreement with simulation results obtained by a stochastic time-domain model.

Paper Details

Date Published: 24 February 2020
PDF: 6 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010F (24 February 2020); doi: 10.1117/12.2547151
Show Author Affiliations
Dominik Auth, Technische Univ. Darmstadt (Germany)
Songtao Liu, Univ. of California, Santa Barbara (United States)
Justin Norman, Univ. of California, Santa Barbara (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)
Stefan Breuer, Technische Univ. Darmstadt (Germany)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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