Share Email Print
cover

Proceedings Paper

Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Self-assembled InAs quantum dot (QD) based heterostructures have been emerged as a potential candidate for optoelectronic device application over last decade due to the three dimensional carrier confinement. Here, we qualitatively demonstrate the effect of growth rate of both QD and capping layer on the photoluminescence (PL) result of MBE grown InAs/GaAs QD heterostructures. The investigated samples are having 2.7 monolayer (ML) near-surface InAs QDs. The InAs QDs in samples A and B are grown with growth rates of 0.2 and 0.1 ML/sec respectively, whereas growth rate of the GaAs capping layer is kept constant (0.62 μm/hr) in both samples. In sample C, QD and capping layer are grown at 0.2 ML/sec and 1.13 μm/hr, respectively. Sample B exhibited lower full-width half maximum of ground peak (36 nm) as compared to sample A (40 nm). This indicates better homogeneity in dot size distribution in sample B, which has a lower growth rate of QDs. Moreover, sample C with higher growth rate of capping layer showed red-shift in PL as compared to sample A. It can be inferred that the growth rate of capping layer affects the composition of QDs by suppressing In diffusion from QDs towards the capping layer. However, sample C showed decrement in PL intensity and it could be attributed to the dissolution of dots due to higher growth rate of capping layer. There is trade-off in optimization of growth rate variabilities of both QDs and capping layer.

Paper Details

Date Published: 2 March 2020
PDF: 7 pages
Proc. SPIE 11291, Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 1129105 (2 March 2020); doi: 10.1117/12.2547134
Show Author Affiliations
Manas Ranjan Mantri, Indian Institute of Technology Bombay (India)
Debiprasad Panda, Indian Institute of Technology Bombay (India)
Sanowar Alam Gazi, Indian Institute of Technology Bombay (India)
Suryansh Dongre, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 11291:
Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII
Diana L. Huffaker; Holger Eisele, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray