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Proceedings Paper

Vapor transport growth of pure and Cr-doped ZnSe and ZnS single crystals (Conference Presentation)

Paper Abstract

Polycrystalline Cr:ZnSe and Cr:ZnS have greatly advanced as mid-IR laser host materials in the last 20 years. These materials are also highly attractive as passive q-switches (PSQs) for 1.5- and 2-micron lasers, enabling greatly-simplified laser architectures for compact, multi-watt, pulsed 2-micron lasers and mid-infrared optical parametric oscillators (OPOs). Evidence suggests that power scaling of lasers and PSQs can be achieved by using single crystal Cr:ZnSe and Cr:ZnS. Here we report successful growth of high purity single crystal ZnS and ZnSe by CVT and PVT respectively, and Cr-doping achieved by iodine-assisted vapor transport of CrSe located in a separate temperature-controlled zone.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112640U (9 March 2020); doi: 10.1117/12.2547084
Show Author Affiliations
Peter G. Schunemann, BAE Systems (United States)
Kevin T. Zawilski, BAE Systems (United States)


Published in SPIE Proceedings Vol. 11264:
Nonlinear Frequency Generation and Conversion: Materials and Devices XIX
Peter G. Schunemann; Kenneth L. Schepler, Editor(s)

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