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Proceedings Paper

InAs/InAsSb type 2 superlattices band parameters determination via magnetoabsorption and k.p modeling
Author(s): G. Krizman; F. Carosella; Philippe A.; R. Ferreira; J. B. Rodriguez; J.-P. Perez; P. Christol; L.-A. de Vaulchier; Y. Guldner
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Paper Abstract

Infrared cameras are used in a wide variety of applications, from military to civilian. Cryogenically cooled IR cameras based on photon-detector arrays are many times more sensitive and faster than uncooled microbolometer thermal imagers.Ga-free InAs/InAsSb type 2 superlattice (T2SL) based devices have been recently fabricated and they showed a first realization of MWIR (Mid-Wave InfraRed) broadband detection up to 5μm. However the band parameters (band offsets, effect of strain, effective mass) of this material system have not been determined accurately, thus limiting the understanding and the prediction of the electronic properties of the devices. In this work we determined the relevant parameters via magnetoabsorption measurements performed on dedicated T2SL samples. Interband magneto-optical transitions lead to an accurate mapping of the Landau levels. The Landau level energies have been calculated using an 8 bands k.p model and the comparison with the experimental data provided a clear description of the T2SL band structure at low temperatures.

Paper Details

Date Published: 2 March 2020
PDF: 8 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 1127408 (2 March 2020); doi: 10.1117/12.2546799
Show Author Affiliations
G. Krizman, Lab. de Physique de l'Ecole normale superieure, ENS, Univ. PSL, CNRS, Sorbonne Univ., Univ. de Paris (France)
F. Carosella, Lab. de Physique de l'Ecole normale superieure, ENS, Univ. PSL, CNRS, Sorbonne Univ., Univ. de Paris (France)
Philippe A., Lab. de Physique de l'Ecole normale superieure, ENS, Univ. PSL, CNRS, Sorbonne Univ., Univ. de Paris (France)
R. Ferreira, Lab. de Physique de l'Ecole normale superieure, ENS, Univ. PSL, CNRS, Sorbonne Univ., Univ. de Paris (France)
J. B. Rodriguez, IES, Univ. Montpellier, CNRS (France)
J.-P. Perez, IES, Univ. Montpellier, CNRS (France)
P. Christol, IES, Univ. Montpellier, CNRS (France)
L.-A. de Vaulchier, ENS, Univ. PSL, CNRS, Sorbonne Univ., Univ. de Paris (France)
Y. Guldner, ENS, Univ. PSL, CNRS, Sorbonne Univ., Univ. de Paris (France)


Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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