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Proceedings Paper

Quantum well solar cells incorporating thin barriers for improved efficiency (Conference Presentation)
Author(s): Stephen J. Polly; Roger E. Welser; Mitsul Kacharia; Anastasiia Fedorenko; Ashok K. Sood; Seth M. Hubbard

Paper Abstract

Strained InGaAs (In = 8%) quantum wells (QW) were inserted into the intrinsic region of n-i-p InGaP/GaAs heterojunction solar cells, with thin (1 nm to 4nm) GaAs barriers separating the QWs. This design exhibited improved carrier collection from the QWs as compared to thicker barrier designs, as well as almost no degradation in Voc from control devices without QWs. Champion devices incorporating three layers of strained InGaAs QWs exhibited conversion efficiencies of >26%, exceeding that of the control, with corresponding short circuit current of 30.22 mA/cm2 and open circuit voltage of 1.03V under 1-sun AM1.5G solar spectrum.

Paper Details

Date Published: 10 March 2020
PDF
Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750O (10 March 2020); doi: 10.1117/12.2546778
Show Author Affiliations
Stephen J. Polly, Rochester Institute of Technology (United States)
Roger E. Welser, Magnolia Optical Technologies, Inc. (United States)
Mitsul Kacharia, Rochester Institute of Technology (United States)
Anastasiia Fedorenko, Rochester Institute of Technology (United States)
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)
Seth M. Hubbard, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 11275:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX
Alexandre Freundlich; Masakazu Sugiyama; Stéphane Collin, Editor(s)

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