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Proceedings Paper

InGaN frequency stabilized high-power devices for atom-cooling and trapping enabling quantum technology (Conference Presentation)
Author(s): Ludwig Prade; John Macarthur; Loyd McKnight; William Dorward; John Sharp; Stephen Najda; Piotr Perlin; Tadeusz Suski; Łucja Marona; Szymon Stanczyk; Przemek Wisniewski; Szymon Grzanka; Dario Schiavon; Michał Leszczynski

Paper Abstract

Quantum based devices offer distinct advantages over conventional technology, such as improved sensitivity for sensing applications or enhanced accuracy for metrology. To utilize this potential, a number of technical requirements must be met, such as the cooling and trapping of neutral atoms for their use as quantum systems. We present our work on InGaN-based semiconductor cooling lasers for a variety of atomic species such as strontium, magnesium and ytterbium whos target wavelength was met by quantum-well composition engineering. Results on growth-epitaxy, facet coating as well as different configurations such as ECDL and MOPAs are presented, depending on the requirement of the application.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800X (10 March 2020); doi: 10.1117/12.2546696
Show Author Affiliations
Ludwig Prade, Fraunhofer UK Ctr. for Applied Photonics (United Kingdom)
John Macarthur, Fraunhofer Ctr. for Applied Photonics (United Kingdom)
Loyd McKnight, Fraunhofer Ctr. for Applied Photonics (United Kingdom)
William Dorward, Optocap Ltd. (United Kingdom)
John Sharp, Helia Photonics Ltd. (United Kingdom)
Stephen Najda, TopGaN Ltd. (Poland)
Piotr Perlin, TopGaN Ltd. (Poland)
Tadeusz Suski, TopGaN Ltd. (Poland)
Łucja Marona, TopGaN Ltd. (Poland)
Szymon Stanczyk, TopGaN Ltd. (Poland)
Przemek Wisniewski, TopGaN Ltd. (Poland)
Szymon Grzanka, TopGaN Ltd. (Poland)
Dario Schiavon, TopGaN Ltd. (Poland)
Michał Leszczynski, TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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