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Proceedings Paper

Zero-valent Au, Cu, and Sn intercalation into GeS nanoribbons: tailoring ultrafast photoconductive response
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Paper Abstract

Germanium sulfide (GeS) is a 2D semiconductor with high carrier mobility and a moderate band gap (~1.5 eV for multilayer crystals), which holds promise for high-speed optoelectronics and energy conversion. Here, we use time resolved THz spectroscopy to investigate how intercalation of Au, Cu, and Sn impacts the photoexcited carrier dynamics and transient photoconductivity of GeS nanoribbons. We find that zero-valent metals affect the photoexcited carrier lifetime and mobility in different ways. Intercalation of GeS with Cu reduces the lifetime of carriers from ~ 120 ps to 60 ps, while Au and Sn intercalation do not. At the same time, intercalation with Cu, Sn and Au significantly enhances the scattering time of photoexcited carriers (~120 fs vs ~65 fs without intercalation), highlighting the potential of zero-valent metal intercalation as a tool for engineering the optoelectronic properties of GeS nanostructures for application in high-speed electronic devices.

Paper Details

Date Published: 27 February 2020
PDF: 7 pages
Proc. SPIE 11278, Ultrafast Phenomena and Nanophotonics XXIV, 112780I (27 February 2020); doi: 10.1117/12.2546691
Show Author Affiliations
Kateryna Kushnir, Worcester Polytechnic Institute (United States)
Teng Shi, Worcester Polytechnic Institute (United States)
Leticia Damian, Worcester Polytechnic Institute (United States)
California State Univ., San Marcos (United States)
Auddy Anilao II, Univ. of California, Davis (United States)
Kristie J. Koski, Univ. of California, Davis (United States)
Lyubov V. Titova, Worcester Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 11278:
Ultrafast Phenomena and Nanophotonics XXIV
Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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