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Proceedings Paper

Realization of GaSb based DFB Lasers and Gain Chips for the 1.9 µm to 3 µm spectral regime for molecular spectroscopy
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Paper Abstract

GaSb based types of diode lasers may cover the spectral regime from below 1.8 μm up to 5 μm. For the wavelength regime of 1.8 μm to 2.5 μm InGaAsSb/GaSb MQW material is used. For 2.5 μm to 3.4 μm InAlGaAsSb/GaSb MQW material is used. For above 3μm, an ICL type of design is required. We realized a growth campaign of 10 GaSb based wavers for covering the wavelength regime from 1.9μm to 3μm. We report on the test, performance and applications results in molecular gas sensing of both, gain chips within an external cavity laser as well as on digital DFB lasers.

Paper Details

Date Published: 24 February 2020
PDF: 13 pages
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011C (24 February 2020); doi: 10.1117/12.2546472
Show Author Affiliations
Martin Honsberg, Sensor Photonics GmbH (Germany)
Tobias Milde, Sacher Lasertechnik GmbH (Germany)
Sebastian Schmidtmann, Sensor Photonics GmbH (Germany)
Christian Assmann, Sacher Lasertechnik GmbH (Germany)
Morten Hoppe, Sacher Lasertechnik GmbH (Germany)
Joachim Sacher, Sensor Photonics GmbH (Germany)
Sacher Lasertechnik GmbH (Germany)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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