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Proceedings Paper

Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)
Author(s): Matthew P. Halsall; Iain Crowe; Rachel Oliver; Menno J. Kappers; Colin J. Humphreys

Paper Abstract

We present a combined photoluminescence (PL) and photomodulated reflectivity (PMR) study of three GaN/InGaN multiquantum well samples. We reported previously that the change in carrier concentration (n) induced by the pump beam can be measured by lock-in techniques using a simple Drude model to calculate n from the change in reflectivity. Here we extend the work by simultansously measuring a thermal signal from the sample, we can thus measure the internal quantum efficiency ηi of samples as a function of carrier concentration. This yields an ηi vs n curve that is strikingly different to those reported previously by PL and electroluminescent techniques (EL), with a very rapid (in n) drop off due to the droop process.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800Q (10 March 2020); doi: 10.1117/12.2546446
Show Author Affiliations
Matthew P. Halsall, The Univ. of Manchester (United Kingdom)
Iain Crowe, The Univ. of Manchester (United Kingdom)
Rachel Oliver, Univ. of Cambridge (United Kingdom)
Menno J. Kappers, Univ. of Cambridge (United Kingdom)
Colin J. Humphreys, Univ. of Cambridge (United Kingdom)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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