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Proceedings Paper

Energy balance model of high-power semiconductor lasers at high-pumping current
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Paper Abstract

The first results are presented, which showed general patterns explaining the influence of drift velocity saturation effects on the light-current curve for an example AlGaAs/InGaAs/GaAs laser heterostructure with an ultra-wide asymmetric waveguide emitting in the 1060 nm spectral range at ultrahigh pump currents (tens of kA/cm2 ). The study carried out clearly shows the limitations of the simplest drift-diffusion models that take into account and do not take into account the saturation of the drift velocity. It is shown that when analyzing high-power semiconductor lasers at high pump currents, it is necessary to take into account the effect of heating of charge carriers in the waveguide by an electric field. The inclusion of an additional mechanism of internal optical loss obtained in the energy balance model made it possible to obtain a satisfactory agreement between the calculated light-current curves and the experimental ones.

Paper Details

Date Published: 2 March 2020
PDF: 9 pages
Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112740K (2 March 2020); doi: 10.1117/12.2546263
Show Author Affiliations
Sergey O. Slipchenko, Ioffe Institute (Russian Federation)
Olga Soboleva, Ioffe Institute (Russian Federation)
Yulia Bobretsova, Ioffe Institute (Russian Federation)
Polina Gavrina, Ioffe Institute (Russian Federation)
Natalia Rudova, Ioffe Institute (Russian Federation)


Published in SPIE Proceedings Vol. 11274:
Physics and Simulation of Optoelectronic Devices XXVIII
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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