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Proceedings Paper

Franz-Keldysh modulation in GeSn-based heterostructures (Conference Presentation)

Paper Abstract

We investigated at room temperature the Franz-Keldysh effect in GeSn layers with Sn concentrations up to 13%. Several p-i-n stacks with indirect and direct band-gaps were grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) with Ge2H6, Si2H6 and SnCl4 precursors. Direct band-gap energies and absorption coefficient were determined in transmission by electro-absorption measurements. The direct band-gap position was consistent with our k.p model. A maximum modulation of 1% was obtained at the direct band gap for a 0.5 V bias.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11276, Optical Components and Materials XVII, 1127606 (10 March 2020); doi: 10.1117/12.2546218
Show Author Affiliations
Mathieu Bertrand, CEA-LETI (France)
Lara Casiez, CEA-LETI (France)
Andréa Quintero, CEA-LETI (France)
Quang Minh Thai, CEA-DRF (France)
Jérémie Chrétien, CEA-LETI (France)
Nicolas Pauc, CEA-DRF (France)
Rami Khazaka, CEA-LETI (France)
Philippe Rodriguez, CEA-LETI (France)
Jean-Michel Hartmann, CEA-LETI (France)
Alexei Tchelnokov, CEA-LETI (France)
Vincent Calvo, CEA-LETI-DOPT (France)
Vincent Reboud, CEA-LETI (France)


Published in SPIE Proceedings Vol. 11276:
Optical Components and Materials XVII
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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