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Proceedings Paper

Angular resolved far-field dynamics of (Al,In)GaN laser diodes
Author(s): Hassan Banayeem; Matthias Damm; Yijie Mu; Ulrich T. Schwarz; Georg Bruederl; Soenke Tautz; Harald König
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Paper Abstract

We investigate the angularly, temporally, and spectrally resolved far-field dynamics of a single lateral mode green (Al,In)GaN laser diodes. For applications as directly modulated light source in laser projection, for AR/VR/MR, etc., a stable beam pointing angle and width of the far-field is required. Combing an angle- resolved measurement with a spectrometer and streak camera, we characterize optical intensity as function of far-field angle, wavelength, and time. Beam pointing angle and width are then calculated from the moments of the angular intensity distributions. We observe a stable far-field behavior for the narrow ridge. This is in contrast to strong variations in beam pointing direction and far-field profile during short pulses for earlier (Al,In)GaN laser diodes, where the dynamics could be tracked to heating of the waveguide. Therefore we attribute the observed stable dynamics of state-of-the-art narrow ridge laser diodes to their low internal losses, low forward voltage, and consequently low heating.

Paper Details

Date Published: 16 February 2020
PDF: 7 pages
Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800T (16 February 2020); doi: 10.1117/12.2546188
Show Author Affiliations
Hassan Banayeem, Technische Univ. Chemnitz (Germany)
Matthias Damm, Technische Univ. Chemnitz (Germany)
Yijie Mu, Technische Univ. Chemnitz (Germany)
Ulrich T. Schwarz, Technische Univ. Chemnitz (Germany)
Georg Bruederl, OSRAM Opto Semiconductors GmbH (Germany)
Soenke Tautz, OSRAM Opto Semiconductors GmbH (Germany)
Harald König, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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