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Proceedings Paper

Energy barrier layers for high-power semiconductor lasers of 1550 nm spectral range (Conference Presentation)
Author(s): Nikita Pikhtin; Dmitrii Veselov; Yulia Bobretsova; Lyudmila Vavilova; Kirill Bakhvalov; Vyacheslav Golovin; Sergey Slipchenko; Peter S. Kop’ev

Paper Abstract

The effect of the number and position of AlInAs energy barrier layers on the output characteristics of high-power multimode AlGaInAs / InP lasers, spectral range 1400–1600 nm, has been studied. It was shown that the use of energy barriers allows increasing the laser maximum output power 1.5-2 times. It was found that the barrier layer should be installed at the waveguide-cladding heterojunction from the p-side in order to localize electrons in the waveguide layer. The study was supported by the Russian Science Foundation, project No. 19-79-30072

Paper Details

Date Published: 17 March 2020
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011G (17 March 2020); doi: 10.1117/12.2546163
Show Author Affiliations
Nikita Pikhtin, Ioffe Institute (Russian Federation)
Dmitrii Veselov, Ioffe Institute (Russian Federation)
Yulia Bobretsova, Ioffe Institute (Russian Federation)
Lyudmila Vavilova, Ioffe Institute (Russian Federation)
Kirill Bakhvalov, Ioffe Institute (Russian Federation)
Vyacheslav Golovin, Ioffe Institute (Russian Federation)
Sergey Slipchenko, Ioffe Institute (Russian Federation)
Peter S. Kop’ev, Ioffe Institute (Russian Federation)

Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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