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Proceedings Paper

Next-generation photo-conductive THz devices for 1550nm excitation (Conference Presentation)
Author(s): Björn Globisch; Robert B. Kohlhaas; Steffen Breuer; Lars Liebermeister; Simon Nellen; Martin Schell

Paper Abstract

A new generation of photoconductive antennas (PCAs) compatible with 1550 nm excitation for terahertz time-domain spectroscopy is presented. Iron (Fe) doped InGaAs grown by molecular beam epitaxy is used as the underlying photoconductor. Due to the advantageous combination of ultrashort carrier lifetime and excellent electronic properties, InGaAs:Fe based PCAs increase the dynamic range for frequencies from 1 THz – 6 THz by more than 10 dB compared to the state-of-the-art.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, 1127911 (10 March 2020); doi: 10.1117/12.2546113
Show Author Affiliations
Björn Globisch, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, HHI (Germany)
Robert B. Kohlhaas, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, HHI (Germany)
Steffen Breuer, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, HHI (Germany)
Lars Liebermeister, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, HHI (Germany)
Simon Nellen, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, HHI (Germany)
Martin Schell, Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, HHI (Germany)


Published in SPIE Proceedings Vol. 11279:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII
Laurence P. Sadwick; Tianxin Yang, Editor(s)

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