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Proceedings Paper

CW performance of QD lasers on silicon including carrier transport in the SCH barrier (Conference Presentation)
Author(s): Marco Saldutti; Alberto Tibaldi; Federica Cappelluti; Francesco Bertazzi; Mariangela Gioannini

Paper Abstract

Experiments on QD lasers grown on GaAs and on Si have revealed the quenching of the GS optical power as the current overcomes the ES threshold. A common technique to mitigate this quenching is the modulation p-doping, but an excessive p-doping level results in a deterioration of the GS optical power and threshold current. Theoretical models based on rate equations have ascribed the GS power quenching to the de-synchronization between the electron and hole dynamics. However, these approaches resort to phenomenological transport times. In this contribution, we study a 1.3 um QD laser grown on silicon by employing a drift-diffusion model for the transport of carriers across the SCH region. We show that the unbalance of electron and hole mobilities in the GaAs barriers is responsible for the GS quenching. The simulations also emphasize the existence of an optimum modulation p-doping level minimizing the GS threshold current, which we ascribe to electrostatic effects induced by this doping.

Paper Details

Date Published: 9 March 2020
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Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010E (9 March 2020); doi: 10.1117/12.2545946
Show Author Affiliations
Marco Saldutti, Politecnico di Torino (Italy)
Alberto Tibaldi, Politecnico di Torino (Italy)
Federica Cappelluti, Politecnico di Torino (Italy)
Francesco Bertazzi, Politecnico di Torino (Italy)
Mariangela Gioannini, Politecnico di Torino (Italy)


Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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