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Proceedings Paper

High-speed and large-capacity integrated silicon photonics technologies
Author(s): Y. Tanaka
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Paper Abstract

We report on our recent progress in high-speed and large-capacity silicon-photonics-based integrated device technologies targeting large-capacity transmission in both datacom and telecom networks fields. A 70 Gbaud NRZ operation of all-silicon Mach–Zehnder modulator was demonstrated using forward-biased PIN diodes accompanied by passive equalizers. A clear optical eye opening was obtained owing to a broad electro-optic bandwidth of 37 GHz. We also successfully developed co-package-type 16-channels parallel silicon integrated transceivers and demonstrated simultaneous 400 Gbps operation. A novel demultiplexer capable to resolve phase-error-induced impairments is reported. With a simple control algorithm combining the heaters with monitored powers, crosstalks of as low as -58 to -49 dB have been obtained. This technology enabling temperature insensitivity and high yields drastically improves performance and cost of wavelength division multiplexing (WDM) transceivers.

Paper Details

Date Published: 31 January 2020
PDF: 7 pages
Proc. SPIE 11308, Metro and Data Center Optical Networks and Short-Reach Links III, 113080K (31 January 2020); doi: 10.1117/12.2545870
Show Author Affiliations
Y. Tanaka, Fujitsu Ltd. (Japan)
Photonics Electronics Technology Research Assoc. (Japan)


Published in SPIE Proceedings Vol. 11308:
Metro and Data Center Optical Networks and Short-Reach Links III
Atul K. Srivastava; Madeleine Glick; Youichi Akasaka, Editor(s)

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