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Proceedings Paper

Influence of Si intermixing on optical properties of Ge on Si and monolithic integration of Ge on Si nanocavity (Conference Presentation)
Author(s): Chulwon Lee; Hyun Gyu Song; Ki-Young Woo; Daegwang Choi; Yong-Hoon Cho

Paper Abstract

We present a temperature dependent optical properties of Ge on Si under influence of Si intermixing and a finding on Δ valley emission. Arrhenius analysis reveals that Si intermixing significantly increase the thermal activation energy of direct valley emission by increasing the energy difference between Γ and L valley. A luminescence peak from Δ valley was revealed from the temperature-dependent study. A clear thermal activation of Δ valley could be observed. We also present monolithically integrated strained Ge nano-cavity fabricated on Si for laser application. The cavity is designed to have strain higher than 1 % and Q ~ 100,000.

Paper Details

Date Published: 9 March 2020
Proc. SPIE 11285, Silicon Photonics XV, 112850T (9 March 2020); doi: 10.1117/12.2545850
Show Author Affiliations
Chulwon Lee, KAIST (Korea, Republic of)
Hyun Gyu Song, KAIST (Korea, Republic of)
Ki-Young Woo, KAIST (Korea, Republic of)
Daegwang Choi, KAIST (Korea, Republic of)
Yong-Hoon Cho, KAIST (Korea, Republic of)

Published in SPIE Proceedings Vol. 11285:
Silicon Photonics XV
Graham T. Reed; Andrew P. Knights, Editor(s)

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