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Proceedings Paper

Characterizations of BAIN films with various boron contents (Conference Presentation)
Author(s): Tinh Binh Tran; Feras AlQatari; Xiaohang Li

Paper Abstract

BAlN films were performed by either the flow-modulated epitaxy method or continuous growth method. All BxAl1-xN films are single-phase confirmed by high-resolution 2θ–ω (002) X-ray diffraction. The Boron (B) content of each sample was determined by Secondary Neutral Mass Spectrometry with various values have been achieved from 22 to 34% and reconfirmed by Rutherford backscattering spectrometry. All BAlN samples clearly showed the columnar crystalline on the surface which was observed by AFM measurement. The high B contents can expand the applications of BAlN for deep ultraviolet and power electronic device applications.

Paper Details

Date Published: 10 March 2020
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Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800F (10 March 2020); doi: 10.1117/12.2545798
Show Author Affiliations
Tinh Binh Tran, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Feras AlQatari, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Xiaohang Li, King Abdullah Univ. of Science and Technology (Saudi Arabia)


Published in SPIE Proceedings Vol. 11280:
Gallium Nitride Materials and Devices XV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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