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Proceedings Paper

Advances in regrown all-semiconductor photonic crystal surface-emitting lasers (Conference Presentation)
Author(s): Adam F. McKenzie; Ben C. King; Zijun Bian; Jonathan R. Orchard; Neil D. Gerrard; Richard J. E. Taylor; David T. D. Childs; Donald A. MacLaren; Richard A. Hogg

Paper Abstract

We outline advances in the design, manufacture, and characterisation of a range of all-semiconductor photonic crystal surface emitting lasers (PCSELs). We initially discuss AlAs/GaAs based PC devices that enjoy improved index contrast compared to our previous GaInP/GaAs devices. We will also discuss all-semiconductor InGaAsP/InP based PC PCSELs operating at 1550 nm. For these high aspect ratio structures, the infill of the PC is a significant epitaxial challenge, and optimisation of MOVPE growth conditions such as growth temperature, rate of temperature increase, and V:III ratio, is demonstrated through TEM structural analysis. We will also discuss the optoelectronic properties of our devices.

Paper Details

Date Published: 9 March 2020
Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010Y (9 March 2020); doi: 10.1117/12.2545791
Show Author Affiliations
Adam F. McKenzie, Univ. of Glasgow (United Kingdom)
Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Ben C. King, Univ. of Glasgow (United Kingdom)
Zijun Bian, Univ. of Glasgow (United Kingdom)
Jonathan R. Orchard, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Neil D. Gerrard, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Richard J. E. Taylor, Univ. of Glasgow (United Kingdom)
David T. D. Childs, Univ. of Glasgow (United Kingdom)
Donald A. MacLaren, Univ. of Glasgow (United Kingdom)
Richard A. Hogg, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 11301:
Novel In-Plane Semiconductor Lasers XIX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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